ELECTRONIC DEVICE COMPRISING NANOWIRE(S), PROVIDED WITH A TRANSITION METAL BUFFER LAYER, METHOD FOR GROWING AT LEAST ONE NANOWIRE AND METHOD FOR PRODUCING A DEVICE

• Main Authors: ARMAND, Marie-Françoise, AMSTATT, Benoit, DUPONT, Florian, HYOT, Bérangère
• Format: Patent
• Language: English; French; German
• Published: 24.08.2022
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; NANOTECHNOLOGY; PERFORMING OPERATIONS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said...