Semiconductor device including a semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure
A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer f...
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Format | Patent |
Language | English French German |
Published |
04.12.2019
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Abstract | A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer. |
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AbstractList | A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer. |
Author | Kim, Joo-sung Chae, Su-hee Kim, Jun-youn Park, Young-soo Tak, Young-jo Kim, Jae-kyun |
Author_xml | – fullname: Chae, Su-hee – fullname: Kim, Jun-youn – fullname: Park, Young-soo – fullname: Kim, Jae-kyun – fullname: Tak, Young-jo – fullname: Kim, Joo-sung |
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DocumentTitleAlternate | Dispositif semi-conducteur comprenant une structure de tampon à semi-conductor et procédé de fabrication d'un tel dispositif utilisant ladite structure Halbleitervorrichtung mit einer Halbleiterpufferstruktur und Verfahren zur Herstellung der Halbleitervorrichtung mit der Halbleiterpufferstruktur |
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Snippet | A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Semiconductor device including a semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure |
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