Semiconductor device including a semiconductor buffer structure, and method of manufacturing the semiconductor device using the semiconductor buffer structure

A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer f...

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Bibliographic Details
Main Authors Chae, Su-hee, Kim, Jun-youn, Park, Young-soo, Kim, Jae-kyun, Tak, Young-jo, Kim, Joo-sung
Format Patent
LanguageEnglish
French
German
Published 04.12.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor buffer structure includes a silicon substrate, a nucleation layer formed on the silicon substrate, and a buffer layer formed on the nucleation layer. The buffer layer includes a first layer formed of a nitride semiconductor material having a uniform composition rate, a second layer formed of the same material as the nucleation layer on the first layer, and a third layer formed of the same material with the same composition ratio as the first layer on the second layer.
Bibliography:Application Number: EP20140189626