Self-limiting etching method with multiple levels

• Main Authors: Gourgon, Cécile, Chevolleau, Thierry, Darnon, Maxime, Desplats, Olivier
• Format: Patent
• Language: English; French; German
• Published: 18.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The method involves forming (410) a protective mask i.e. hard mask (230), covering masked areas of a face of a substrate and defining an intermediate space. A plasma etching of relief patterns (110) is performed (420) in a chamber to form inclined flanks from the masked areas on the space by forming...