Self-limiting etching method with multiple levels
The method involves forming (410) a protective mask i.e. hard mask (230), covering masked areas of a face of a substrate and defining an intermediate space. A plasma etching of relief patterns (110) is performed (420) in a chamber to form inclined flanks from the masked areas on the space by forming...
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| Main Authors | , , , |
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| Format | Patent |
| Language | English French German |
| Published |
18.11.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The method involves forming (410) a protective mask i.e. hard mask (230), covering masked areas of a face of a substrate and defining an intermediate space. A plasma etching of relief patterns (110) is performed (420) in a chamber to form inclined flanks from the masked areas on the space by forming a continuous passivation layer (440) on the inclined flanks to produce auto limitation of the etching when the inclined flanks join each other. An additional gas to the plasma is introduced into the chamber, where the gas has molecules of a chemical species participating in formation of the layer. |
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| AbstractList | The method involves forming (410) a protective mask i.e. hard mask (230), covering masked areas of a face of a substrate and defining an intermediate space. A plasma etching of relief patterns (110) is performed (420) in a chamber to form inclined flanks from the masked areas on the space by forming a continuous passivation layer (440) on the inclined flanks to produce auto limitation of the etching when the inclined flanks join each other. An additional gas to the plasma is introduced into the chamber, where the gas has molecules of a chemical species participating in formation of the layer. |
| Author | Darnon, Maxime Chevolleau, Thierry Gourgon, Cécile Desplats, Olivier |
| Author_xml | – fullname: Gourgon, Cécile – fullname: Chevolleau, Thierry – fullname: Darnon, Maxime – fullname: Desplats, Olivier |
| BookMark | eNrjYmDJy89L5WQwDE7NSdPNyczNLMnMS1dILUnOANG5qSUZ-SkK5ZklGQq5pTklmQU5qQo5qWWpOcU8DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSTeNcDI3MLEwsDYydCYCCUATFstSg |
| ContentType | Patent |
| DBID | EVB |
| DatabaseName | esp@cenet |
| DatabaseTitleList | |
| Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Medicine Chemistry Sciences |
| DocumentTitleAlternate | Procédé de gravure autolimité à niveaux multiples Auf mehreren Ebenen selbst beschränkendes Ätzverfahren |
| ExternalDocumentID | EP2784803B1 |
| GroupedDBID | EVB |
| ID | FETCH-epo_espacenet_EP2784803B13 |
| IEDL.DBID | EVB |
| IngestDate | Fri Jul 19 15:30:56 EDT 2024 |
| IsOpenAccess | true |
| IsPeerReviewed | false |
| IsScholarly | false |
| Language | English French German |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-epo_espacenet_EP2784803B13 |
| Notes | Application Number: EP20140155317 |
| OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201118&DB=EPODOC&CC=EP&NR=2784803B1 |
| ParticipantIDs | epo_espacenet_EP2784803B1 |
| PublicationCentury | 2000 |
| PublicationDate | 20201118 |
| PublicationDateYYYYMMDD | 2020-11-18 |
| PublicationDate_xml | – month: 11 year: 2020 text: 20201118 day: 18 |
| PublicationDecade | 2020 |
| PublicationYear | 2020 |
| RelatedCompanies | COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES Centre National de la Recherche Scientifique |
| RelatedCompanies_xml | – name: Centre National de la Recherche Scientifique – name: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES |
| Score | 3.2979279 |
| Snippet | The method involves forming (410) a protective mask i.e. hard mask (230), covering masked areas of a face of a substrate and defining an intermediate space. A... |
| SourceID | epo |
| SourceType | Open Access Repository |
| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Self-limiting etching method with multiple levels |
| URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201118&DB=EPODOC&locale=&CC=EP&NR=2784803B1 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFfWmVbG-2IPkttg8uiaHIORFEdoGrdJbyWY3UAi1NBH_vjMxrV70tMMu7GNgdmZ25psFuLPV0JZWrrk0C4c7aMHzTOiCZ1KZ2tXSyU0COI8nYvTqPM2H8w4st1iYpk7oZ1McESUqR3mvm_t6_fOIFTW5ldW9XGLX-2My8yOj9Y5Jm6E4R4Efp9NoGhphiJQxefYpvuYO7AAdpT2yoqnMfvwWEChl_VujJMewn-Jkq_oEOsWmB4fh9uO1HhyM23g3kq3oVadgvuiy4CXhkVDbMOI2td8_QDN6TmXb5EBWUiZQdQYsiWfhiOPai905F3G626V9Dl10__UFsExqIVz1oLIidwZKuYWyRO54OvNczxKqD_0_p7n8Z-wKjohhhKsz3Wvo1psPfYMKtpa3DWu-AChxgaM |
| link.rule.ids | 230,309,786,891,25594,76906 |
| linkProvider | European Patent Office |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LS8NAEB5KFetNq2J95iC9BZtmmyaHIORRojZp0Si9lWx2A4WgpYn4952JSfWipx12YR8DszOzM98swI0uRjofplLlWsZUhha8mhgyUxMuNGlKzlKNAM5hZAQv7GExWrRg1WBhqjqhn1VxRJSoFOW9rO7r9c8jllflVha3fIVd73eT2Pb6tXdM2gzF2XNsfz7zZm7fdZHqR082xdfMge6go7QzpuK8ZDm9OgRKWf_WKJMD2J3jZG_lIbSyTRc6bvPxWhf2wjrejWQtesURaM8yz9Sc8EiobRTiNrXfP0Ar9JyqNMmBSk6ZQMUxKBM_dgMV115uz7n059td6ifQRvdfnoKScGkYphiLJEvZQAgzE0MjZZZMLNMaGqIHvT-nOftn7Bo6QRxOl9P76PEc9ol5hLHTzAtol5sPeYnKtuRXFZu-AGDhhJA |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Self-limiting+etching+method+with+multiple+levels&rft.inventor=Gourgon%2C+C%C3%A9cile&rft.inventor=Chevolleau%2C+Thierry&rft.inventor=Darnon%2C+Maxime&rft.inventor=Desplats%2C+Olivier&rft.date=2020-11-18&rft.externalDBID=B1&rft.externalDocID=EP2784803B1 |