MEMRISTIVE ELEMENT BASED ON HETERO-JUNCTION OXIDE

Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a meta...

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Bibliographic Details
Main Authors WILLIAMS, STANLEY R, ZHANG, MINXIAN MAX, YANG, JIANHUA
Format Patent
LanguageEnglish
French
German
Published 27.04.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.
Bibliography:Application Number: EP20110874307