High breakdown voltage LDMOS device
A multi-region (81, 83) lateral-diffused-metal-oxide-semiconductor (LDMOS) device (40) has a semiconductor-on-insulator (SOI) support structure (21) on or over which are formed a substantially symmetrical, laterally internal, first LDMOS region (81) and a substantially asymmetric, laterally edge-pro...
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Main Authors | , , |
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Format | Patent |
Language | English French German |
Published |
25.03.2020
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Subjects | |
Online Access | Get full text |
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