High breakdown voltage LDMOS device

A multi-region (81, 83) lateral-diffused-metal-oxide-semiconductor (LDMOS) device (40) has a semiconductor-on-insulator (SOI) support structure (21) on or over which are formed a substantially symmetrical, laterally internal, first LDMOS region (81) and a substantially asymmetric, laterally edge-pro...

Full description

Saved in:
Bibliographic Details
Main Authors Zuo, Jiang-Kai, Blomberg, Daniel J, Yang, Hongning
Format Patent
LanguageEnglish
French
German
Published 25.03.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Be the first to leave a comment!
You must be logged in first