CONTROLLING PIT FORMATION IN A III-NITRIDE DEVICE

• Main Authors: GARDNER, Nathan F, YE, Qi Laura, YI, Sungsoo
• Format: Patent
• Language: English; French; German
• Published: 29.11.2017
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer...