Phase change memory coding before packaging

An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells (400, 1500, 1600, 1700) and the memory, and a second resistance state and some other cells (400, 1500, 1600, 1700) in the memory to represent a data set. The integrated circuit phase change...

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Bibliographic Details
Main Authors LUNG, HSIANG-LAN, WU, CHAO-I, LEE, MING-HSIU, SHIH, YEN-HAO, WANG, TIEN-YEN
Format Patent
LanguageEnglish
French
German
Published 04.01.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells (400, 1500, 1600, 1700) and the memory, and a second resistance state and some other cells (400, 1500, 1600, 1700) in the memory to represent a data set. The integrated circuit phase change memory is mounted on a substrate after coding the data set. After mounting the integrated circuit phase change memory, the data set is read by sensing the first and second resistance states, and changing cells (400, 1500, 1600, 1700) in the first resistance state to a third resistance state and changing cells (400, 1500, 1600, 1700) in the second resistance state to a fourth resistance state. The first and second resistance states maintain a sensing margin after solder bonding or other thermal cycling process. The third and fourth resistance states are characterized by the ability to cause a transition using higher speed and lower power, suitable for a mission function of a circuit.
Bibliography:Application Number: EP20100190791