Method for calibrating a pyrometer, method for determining the temperature of a semiconducting wafer and system for determining the temperature of a semiconducting wafer

The present invention relates to a method for calibrating a pyrometer and a method for determining the temperature of a semiconducting wafer. It is an object of the present invention to provide a method for calibrating a pyrometer which overcomes the disadvantages of the prior art. According to the...

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Main Authors HABERLAND, KOLJA, UREDAT, STEFFEN, BINETTI, MARCELLO, ZILIAN, JENS, SCHENK, TOBIAS, HENNINGER, BERND, ZETTLER, JOERG-THOMAS
Format Patent
LanguageEnglish
French
German
Published 25.01.2012
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Summary:The present invention relates to a method for calibrating a pyrometer and a method for determining the temperature of a semiconducting wafer. It is an object of the present invention to provide a method for calibrating a pyrometer which overcomes the disadvantages of the prior art. According to the invention, the pyrometer (1) is calibrated by: providing an integrating sphere (8), irradiating the integrating sphere (8) with radiation corresponding to a predetermined temperature and to the wavelength detection characteristics of the pyrometer, wherein the radiation which is irradiated into the integrating sphere (8) is calibrated by comparison of the flux density leaving through the window plate (10) with the emitted light of a calibrated black-body source and stabilized according to the predetermined radiation-temperature using a detector (9) which is located inside the integrating sphere (8), measuring, by the pyrometer (1), a thermal radiation signal of the integrating sphere (8), determining an apparent temperature of the integrating sphere (8) from measured thermal radiation signal of the integrating sphere (8), and wherein the pyrometer (1) is calibrated by assigning the predetermined radiation temperature of the integrating sphere (8) with the thermal radiation signal measured by the pyrometer (1), wherein the surface area of the semiconducting wafer (2) corresponds with the surface area of the opening (10) of the integrating sphere (8).
Bibliography:Application Number: EP20090170604