Thermoelectric Device, Thermoelectric Device Module, and Method of forming the Thermoelectric Device

Provided are a thermoelectric device, a thermoelectric device module, and a method of forming the thermoelectric device. The thermoelectric device includes a first conductive type first semiconductor nanowire including at least one first barrier region; a second conductive type second semiconductor...

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Main Authors JANG, MOON-GYU, KIM, JONG-DAE, ZYUNG, TAE-HYOUNG, JUN, MYUNG-SIM, ROH, TAE-MOON
Format Patent
LanguageEnglish
French
German
Published 27.06.2012
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Abstract Provided are a thermoelectric device, a thermoelectric device module, and a method of forming the thermoelectric device. The thermoelectric device includes a first conductive type first semiconductor nanowire including at least one first barrier region; a second conductive type second semiconductor nanowire including at least one second barrier region; a first electrode connected to one end of the first semiconductor nanowire; a second electrode connected to one end of the second semiconductor nanowire; and a common electrode connected to the other end of the first semiconductor nanowire and the other end of the second semiconductor nanowire. The first barrier region is greater than the first semiconductor nanowire in thermal conductivity, and the second barrier region is greater than the second semiconductor nanowire in thermal conductivity.
AbstractList Provided are a thermoelectric device, a thermoelectric device module, and a method of forming the thermoelectric device. The thermoelectric device includes a first conductive type first semiconductor nanowire including at least one first barrier region; a second conductive type second semiconductor nanowire including at least one second barrier region; a first electrode connected to one end of the first semiconductor nanowire; a second electrode connected to one end of the second semiconductor nanowire; and a common electrode connected to the other end of the first semiconductor nanowire and the other end of the second semiconductor nanowire. The first barrier region is greater than the first semiconductor nanowire in thermal conductivity, and the second barrier region is greater than the second semiconductor nanowire in thermal conductivity.
Author KIM, JONG-DAE
ZYUNG, TAE-HYOUNG
JUN, MYUNG-SIM
JANG, MOON-GYU
ROH, TAE-MOON
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DocumentTitleAlternate Thermoelektrische Vorrichtung, thermoelektrisches Vorrichtungsmodul und Verfahren zur Herstellung der thermoelektrischen Vorrichtung
Dispositif thermoélectrique, module de dispositif thermoélectrique, et procédé de formation du dispositif thermoélectrique
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Snippet Provided are a thermoelectric device, a thermoelectric device module, and a method of forming the thermoelectric device. The thermoelectric device includes a...
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Title Thermoelectric Device, Thermoelectric Device Module, and Method of forming the Thermoelectric Device
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