Method for manufacturing a microelectronic device equipped with semiconductor areas on an insulator with horizontal Ge concentration gradient

• Main Authors: VINCENT, BENJAMIN, DESTEFANIS, VINCENT
• Format: Patent
• Language: English; French; German
• Published: 23.12.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The method involves forming an oxidation mask on a silicon on insulator support (100), where the mask comprises holes revealing a silicon based semi-conductor zone and comprising inclined flanks. Silicon-germanium based semiconductor zones (130) are formed on the silicon based semi-conductor zone. T...