Amorphous Ge/Te deposition process
Germanium, tellurium, and/or antimony precursors are usefully employed to form germanium-, tellurium- and/or antimony-containing films, such as films of GeTe, GST, and thermoelectric germanium-containing films. Processes for using these precursors to form amorphous films are also described. Further...
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Main Authors | , , , , , , , , , |
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Format | Patent |
Language | English French German |
Published |
27.05.2009
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Subjects | |
Online Access | Get full text |
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