PRECURSOR FOR FILM FORMATION AND METHOD FOR FORMING RUTHENIUM-CONTAINING FILM

• Main Authors: GATINEAU, JULIEN, DUSSARRAT, CHRISTIAN, YANAGITA, KAZUTAKA
• Format: Patent
• Language: English; French; German
• Published: 14.12.2011
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Precursor for ruthenium film deposition, comprising ruthenium tetroxide dissolved in at least one non-flammable solvent, preferably a fluorinated solvent having the general formula CxHyFzOtNu wherein: 2x+2<=y+z and 2<=x<=15 and z>y and t+u>=1 (t+u preferably equal to 1) x, y, and z being positive integers equal to or greater than 1, t and u being integers greater than or equal to zero.