ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING

• Main Authors: HABERERN, KEVIN, BHARATHAN, JAYESH, IBBETSON, JAMES, LI, TING, EMERSON, DAVID, RAFFETTO, MARK, BERGMANN, MICHAEL
• Format: Patent
• Language: English; French; German
• Published: 18.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal...