Nitride semiconductor vertical cavity surface emitting laser
In one aspect, a VCSEL (10) includes a base region (16) that has a vertical growth part (38) laterally adjacent a first optical reflector (14) and a lateral growth part (40) that includes nitride semiconductor material vertically over at least a portion of the first optical reflector (14). An active...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English French German |
Published |
27.10.2010
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | In one aspect, a VCSEL (10) includes a base region (16) that has a vertical growth part (38) laterally adjacent a first optical reflector (14) and a lateral growth part (40) that includes nitride semiconductor material vertically over at least a portion of the first optical reflector (14). An active region (18) has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part (40) of the base region (16) and includes a first dopant of a first electrical conductivity type. A contact region (20) includes a nitride semiconductor material laterally adjacent the active region (18) and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector (22) is vertically over the active region (18) and forms with the first optical reflector (14) a vertical optical cavity (28) overlapping at least a portion of the at least one quantum well (44, 46, 48) of the active region (18). A method of fabricating a VCSEL also is described. |
---|---|
AbstractList | In one aspect, a VCSEL (10) includes a base region (16) that has a vertical growth part (38) laterally adjacent a first optical reflector (14) and a lateral growth part (40) that includes nitride semiconductor material vertically over at least a portion of the first optical reflector (14). An active region (18) has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part (40) of the base region (16) and includes a first dopant of a first electrical conductivity type. A contact region (20) includes a nitride semiconductor material laterally adjacent the active region (18) and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector (22) is vertically over the active region (18) and forms with the first optical reflector (14) a vertical optical cavity (28) overlapping at least a portion of the at least one quantum well (44, 46, 48) of the active region (18). A method of fabricating a VCSEL also is described. |
Author | CORZINE, SCOTT W BOUR, DAVID |
Author_xml | – fullname: BOUR, DAVID – fullname: CORZINE, SCOTT W |
BookMark | eNrjYmDJy89L5WSw8cssKcpMSVUoTs3NTM7PSylNLskvUihLLSrJTE7MUUhOLMssqVQoLi1KS0xOVQAqKinJzEtXyEksTi3iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQVAHXmpJfGuAYbmpqZGBsZOhsZEKAEA6AEx0g |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | Oberflächenemittierender Nitrid-Halbleiterlaser mit vertikalem Resonator Laser semi-conducteur à base de nitrure, à émission de surface et à cavité verticale |
ExternalDocumentID | EP1755203B1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_EP1755203B13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 15:27:22 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English French German |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_EP1755203B13 |
Notes | Application Number: EP20060016266 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101027&DB=EPODOC&CC=EP&NR=1755203B1 |
ParticipantIDs | epo_espacenet_EP1755203B1 |
PublicationCentury | 2000 |
PublicationDate | 20101027 |
PublicationDateYYYYMMDD | 2010-10-27 |
PublicationDate_xml | – month: 10 year: 2010 text: 20101027 day: 27 |
PublicationDecade | 2010 |
PublicationYear | 2010 |
RelatedCompanies | AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LTD |
RelatedCompanies_xml | – name: AVAGO TECHNOLOGIES ECBU IP (SINGAPORE) PTE. LTD |
Score | 2.793069 |
Snippet | In one aspect, a VCSEL (10) includes a base region (16) that has a vertical growth part (38) laterally adjacent a first optical reflector (14) and a lateral... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY |
Title | Nitride semiconductor vertical cavity surface emitting laser |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101027&DB=EPODOC&locale=&CC=EP&NR=1755203B1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-L8Ig_St2I_lxYsQr8YwroiU_Y22jSFvrSj7fDf9xK66YtCHo4khLvA5XK5y-8AngpLzws0zarJ5WsVLVT0bJmaZZzahUPdUlaeWySz-Yf1trbXI6j2f2EkTuiXBEdEjWKo7708r7c_j1ihzK3snvMKu5rXeOWFyuAd6wIhjSqh70XpMlwGShAgpSTvHlpJ29BMHx2lI3GLFjD70acvPqVsf1uU-ByOU1ys7i9gxOsJnAb7wmsTOFkM8W4kB9XrLuElqfoWOSadSGdvaoHT2rREllPGfSYsE1UgSLdrSxSI4CSZ0UzwdszbKyBxtArmKrKxOYi8idIDw-Y1jOum5jdAdIMZGtMcXpaOVZqWq5t5rrm8yBm37IxOYfrnMrf_jN3BmQyKYzPoPYz7dscf0Nb2-aPcpW_3_oSj |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTsX5mQfpW7GfSwsWoV9UXbshU_Y2-pFCX9rRdvjvew3d9EUhD0cSwl3gcvnlLncAD5kmJxmaZlFl_LWKZiIi21SMY0b1zKBmzivPhdE0-NBeV_pqAMXuLwzPE_rFkyOiRqWo7y0_rzc_j1guj61sHpMCu6pnf2m5Qo-O5S5DGhVc2_IWc3fuCI6DlBC9W2gldUVSbQRKBxQRIUdKn3b3KWXz26L4J3C4wMXK9hQGrBzDyNkVXhvDUdj7u5HsVa85g6eoaGvkmDRdOHtVdnlaq5rwcsq4zySNuyoQpNnWOQpEcBKPaCZ4O2b1ORDfWzqBiGys9yKvvcWeYfUChmVVsksgspIqUioZLM8NLVc1U1aTRDJZlqRM02M6gcmfy1z9M3YPo2AZztazl-jtGo65gxybQm9g2NZbdot2t03u-I59A1ELh40 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Nitride+semiconductor+vertical+cavity+surface+emitting+laser&rft.inventor=BOUR%2C+DAVID&rft.inventor=CORZINE%2C+SCOTT+W&rft.date=2010-10-27&rft.externalDBID=B1&rft.externalDocID=EP1755203B1 |