Nitride semiconductor vertical cavity surface emitting laser

• Main Authors: BOUR, DAVID, CORZINE, SCOTT W
• Format: Patent
• Language: English; French; German
• Published: 21.02.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

In one aspect, a VCSEL (10) includes a base region (16) that has a vertical growth part (38) laterally adjacent a first optical reflector (14) and a lateral growth part (40) that includes nitride semiconductor material vertically over at least a portion of the first optical reflector (14). An active...