BURIED HETEROSTRUCTURE DEVICE FABRICATED BY SINGLE STEP MOCVD

• Main Authors: CORZINE, SCOTT, W, BOUR, DAVID, P
• Format: Patent
• Language: English; French; German
• Published: 24.08.2011
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PHYSICS

The device is an optoelectronic device or transparent waveguide device that comprises a growth surface, a growth mask, an optical waveguide core mesa and a cladding layer. The growth mask is located on the semiconductor surface and defines an elongate growth window. The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer comprising a growth surface, growing an optical waveguide core mesa on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material at a second growth temperature, lower than the first growth temperature.