METHOD FOR FILLING TRENCH AND RELIEF GEOMETRIES IN SEMICONDUCTOR STRUCTURES

• Main Authors: KOEHLER, DANIEL, FOERSTER, MATTHIAS, TEMMLER, DIETMAR, LORENZ, BARBARA
• Format: Patent
• Language: English; French; German
• Published: 27.04.2005
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high conformity and minimal roughness. A V etching reaching down to a predetermined depth of the trench structu...