METHOD FOR FILLING TRENCH AND RELIEF GEOMETRIES IN SEMICONDUCTOR STRUCTURES
A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high conformity and minimal roughness. A V etching reaching down to a predetermined depth of the trench structu...
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Main Authors | , , , |
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Format | Patent |
Language | English French German |
Published |
27.04.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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