HYBRID LOW-k INTERCONNECT STRUCTURE COMPRISED OF 2 SPIN-ON DIELECTRIC MATERIALS

• Main Authors: HEDRICK, JEFFREY, CURTIS, PURUSHOTHAMAN, SAMPATH, GATES, STEPHEN, MCCONNELL, NITTA, SATYANARAYANA, V, TYBERG, CHRISTY, SENSENICH
• Format: Patent
• Language: English; French; German
• Published: 24.10.2007
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A metal wiring plus low-k dielectric interconnect structure of the dual damascene-type is provided wherein the conductive metal lines and vias are built into a hybrid low-k dielectric which includes two spun-on dielectrics that have different atomic compositions and at least one of the two spun-on dielectrics is porous. The two spun-on dielectrics used in forming the inventive hybrid low-k dielectric each have a dielectric constant of about 2.6 or less, preferably each dielectric of the hybrid structure has a k of from about 1.2 to about 2.2. By utilizing the inventive hybrid low-k dielectric excellent control over metal line resistance (trench depth) is obtained, without no added cost. This is achieved without the use of a buried etch stop layer, which if present, would be formed between the two spun-on dielectrics. Moreover, the spun-on dielectrics of the hybrid low-k dielectric have distinctly different atomic compositions enabling control over the conductor resistance using the bottom spun-on dielectric (i.e., via dielectric) as an inherent etch stop layer for the upper spun-on dielectric (i.e., line dielectric).