SEMICONDUCTOR DEVICE WITH REDUCED LINE-TO-LINE CAPACITANCE AND CROSS TALK NOISE
A transistor device (200) is disclosed, having an insulating material disposed between the gate electrode (204) and the drain and source lines, wherein the dielectric constant of the insulating amterial is 3.5 or less. Accodingly, the capacitance between the gate electrode and the drain and source l...
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| Main Authors | , , |
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| Format | Patent |
| Language | English French German |
| Published |
13.08.2003
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| Edition | 7 |
| Subjects | |
| Online Access | Get full text |
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| Abstract | A transistor device (200) is disclosed, having an insulating material disposed between the gate electrode (204) and the drain and source lines, wherein the dielectric constant of the insulating amterial is 3.5 or less. Accodingly, the capacitance between the gate electrode and the drain and source lines can be reduced, thereby improving signal performance of the field effect transistor (200) with decreased cross talk noise. |
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| AbstractList | A transistor device (200) is disclosed, having an insulating material disposed between the gate electrode (204) and the drain and source lines, wherein the dielectric constant of the insulating amterial is 3.5 or less. Accodingly, the capacitance between the gate electrode and the drain and source lines can be reduced, thereby improving signal performance of the field effect transistor (200) with decreased cross talk noise. |
| Author | WIECZOREK, KARSTEN HORSTMANN, MANFRED HAUSE, FREDERICK, N |
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| DocumentTitleAlternate | HALBLEITERVORRICHTUNG MIT REDUZIERTER KAPAZITÄT ZWISCHEN LEITERBAHNEN UND REDUZIERTEM ÜBERSPRECHEN DISPOSITIF A SEMI-CONDUCTEUR A CAPACITANCE LIGNE A LIGNE ET A BRUIT DIAPHONIE REDUITS |
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| Notes | Application Number: EP20010977517 |
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| RelatedCompanies | ADVANCED MICRO DEVICES INC |
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| Snippet | A transistor device (200) is disclosed, having an insulating material disposed between the gate electrode (204) and the drain and source lines, wherein the... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | SEMICONDUCTOR DEVICE WITH REDUCED LINE-TO-LINE CAPACITANCE AND CROSS TALK NOISE |
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