INGAN-BASED LIGHT-EMITTING DIODE CHIP AND A METHOD FOR THE PRODUCTION THEREOF

A light-emitting diode chip ( 1 ), in which over a substrate ( 2 ), a series of epitaxial layers ( 3 ) with a radiation-emitting active structure ( 4 ) based on InGaN is disposed. Between the substrate ( 2 ) and the active structure ( 4 ), a buffer layer ( 20 ) is provided. The material or materials...

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Bibliographic Details
Main Authors BAUR, JOHANNES, HAHN, BERTHOLD, HAERLE, VOLKER, BRUEDERL, GEORG, STRAUSS, UWE
Format Patent
LanguageEnglish
French
German
Published 09.04.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A light-emitting diode chip ( 1 ), in which over a substrate ( 2 ), a series of epitaxial layers ( 3 ) with a radiation-emitting active structure ( 4 ) based on InGaN is disposed. Between the substrate ( 2 ) and the active structure ( 4 ), a buffer layer ( 20 ) is provided. The material or materials of the buffer layer ( 20 ) are selected such that their epitaxial surface ( 6 ) for the epitaxy of the active structure ( 4 ) is unstressed or slightly stressed at their epitaxial temperature. The active structure ( 4 ) has In-rich zones ( 5 ), disposed laterally side by side relative to the epitaxial plane, in which zones the In content is higher than in other regions of the active structure ( 4 ). A preferred method for producing the chip is disclosed.
Bibliography:Application Number: EP20010949261