GROUP-III NITRIDE COMPOUND SEMICONDUCTOR DEVICE

An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained. That is, in the present invention, in a device having an outermost diameter of not smaller than 700 mu m, a distance from an n electrode to a farthest point of a p e...

Full description

Saved in:
Bibliographic Details
Main Authors HIRANO, ATSUO, NAGASAKA, NAOHISA, UEMURA, TOSHIYA, OTA, KOICHI
Format Patent
LanguageEnglish
French
German
Published 16.10.2013
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained. That is, in the present invention, in a device having an outermost diameter of not smaller than 700 mu m, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 mu m.
Bibliography:Application Number: EP20010917703