Semiconductor laser and method of manufacturing

• Main Authors: NAGASHIMA, YASUAKI, SHINONE, KATSUNORI, KIKUGAWA, TOMOYUKI
• Format: Patent
• Language: English; French; German
• Published: 04.09.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An n-type semiconductor substrate (21) has a (100) crystal plane as an upper surface. A mesa stripe portion (22) has a trapezoidal shape including an n-type first clad layer (24), an active layer (25) and a p-type second clad layer (26) sequentially stacked on the n-type semiconductor substrate (21) and formed along a direction. A current block portion (23) is formed of a p-type current blocking layer (29) formed outside the mesa stripe portion (22) and on the n-type semiconductor substrate (21) and an n-type current blocking layer (30) formed on the p-type current blocking layer (29). A p-type third clad layer (31) simultaneously covers both the upper surface of the mesa stripe portion (22) and the upper surface of the current blocking portion (23). The inclination angle as being acute angle of the side surface of the mesa stripe portion (22) having the trapezoidal shape and formed along the direction is close to the inclination angle of a (111)B crystal plane with respect to the (100) crystal plane and set at one of an angle larger than and an angle smaller than the inclination angle of the (111)B crystal plane.