STRONTIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS

A process for preparing strontium doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped strontium and melted in a silica crucible. During melting and throughout the crystal growing process the strontium acts as a devitrification promoter and crea...

Full description

Saved in:
Bibliographic Details
Main Authors KELTNER, STEVEN J, HOLDER, JOHN, D, PHILLIPS, RICHARD J
Format Patent
LanguageEnglish
French
German
Published 09.01.2002
Edition7
Subjects
Online AccessGet full text

Cover

Loading…
Abstract A process for preparing strontium doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped strontium and melted in a silica crucible. During melting and throughout the crystal growing process the strontium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal.
AbstractList A process for preparing strontium doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped strontium and melted in a silica crucible. During melting and throughout the crystal growing process the strontium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal.
Author KELTNER, STEVEN J
HOLDER, JOHN, D
PHILLIPS, RICHARD J
Author_xml – fullname: KELTNER, STEVEN J
– fullname: HOLDER, JOHN, D
– fullname: PHILLIPS, RICHARD J
BookMark eNrjYmDJy89L5WRwDQ4J8vcL8Qz1VXDxD_D0c1fwd1Pw9fcJcfVTCPb08XT291Nw8w9SCA12VfD0U3AOigwOcfRRcA_yDwcpDgjyd3YNDuZhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGuAYaGZpYmlmaOhsZEKAEAZh4trg
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
DocumentTitleAlternate MIT STRONTIUM DOTIERTER SILIZIUMSCHMELZE ZUR VERWENDUNG IN EINEM KRISTALLZÜCHTUNGSVERFAHREN
DOPAGE AU STRONTIUM DU SILICIUM EN FUSION DANS UN PROCEDE DE CRISTALLOGENESE
Edition 7
ExternalDocumentID EP1169496A1
GroupedDBID EVB
ID FETCH-epo_espacenet_EP1169496A13
IEDL.DBID EVB
IngestDate Fri Jul 19 14:00:55 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
French
German
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_EP1169496A13
Notes Application Number: EP20000916304
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020109&DB=EPODOC&CC=EP&NR=1169496A1
ParticipantIDs epo_espacenet_EP1169496A1
PublicationCentury 2000
PublicationDate 20020109
PublicationDateYYYYMMDD 2002-01-09
PublicationDate_xml – month: 01
  year: 2002
  text: 20020109
  day: 09
PublicationDecade 2000
PublicationYear 2002
RelatedCompanies MEMC ELECTRONIC MATERIALS, INC
RelatedCompanies_xml – name: MEMC ELECTRONIC MATERIALS, INC
Score 2.5423331
Snippet A process for preparing strontium doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped strontium and...
SourceID epo
SourceType Open Access Repository
SubjectTerms AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Title STRONTIUM DOPING OF MOLTEN SILICON FOR USE IN CRYSTAL GROWING PROCESS
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20020109&DB=EPODOC&locale=&CC=EP&NR=1169496A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fT8IwEL4QNOqbokb8lT6YvS0GmN32QAx0Hcxs67INxSeyjZLwMojM-O97XQB90bembS7tJdevX--uB_CQmb3corKj07mFBKWQhY44nuvzhWlnGc2UF1JFW4R0PDFepk_TBix3uTD1P6Ff9eeIaFEF2ntVn9frn0csp46t3DzmS-xaPbtp39F27Fj5dm3NGfZ5JBzBNMawpYVxv9OhtmHTARKlA7xFmyr6i78OVVLK-jeiuKdwGKGwsjqDhixbcMx2hddacBRs_d3Y3Jre5hx4ksYiTL1JQByBXHxEhEsC4ac8JInne0yEBBkdmSSceCFh8XuSDnwyisWbmhzFgqGuL4C4PGVjHdcz2-99xqP9ynuX0CxXpbwCQs0FIo6JbKcwjIXsIslBxRq50c1yKS2rDe0_xVz_M3YDJ3W1E_XEYN9Cs_r4lHcIulV-X6vrG7_XgGI
link.rule.ids 230,309,783,888,25578,76884
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT8IwFH8haMSbokb87MHsthhgdNuBGOg2mG7tsg3FE9lGSbgMIjP--74tgF709tI2TfuS119_fR8FeEj0bmpQ2Vbp3ECCkslMRRxP1flCN5OEJqUXsoy24HQ80Z6nvWkNlrtcmKpO6FdVHBEtKkN7L6rzev3ziGVVsZWbx3SJTasnJ-5byo4dl75dU7GGfTsQlmAKYygpPOy329TUTDpAonSAN2yjLLNvvw7LpJT1b0RxTuAwwMny4hRqMm9Cg-0-XmvCkb_1d6O4Nb3NGdhRHAoeuxOfWAK5-IgIh_jCi21OItdzmeAEGR2ZRDZxOWHhexQPPDIKxVs5OAgFQ12fA3HsmI1VXM9sv_eZHexX3r2Aer7K5SUQqi8QcXRkO5mmLWQHSQ4qVku1TpJKaRgtaP05zdU_fffQGMe-N_Nc_nINx9XPJ-Vzg3kD9eLjU94iABfpXaW6b-1Rg1I
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=STRONTIUM+DOPING+OF+MOLTEN+SILICON+FOR+USE+IN+CRYSTAL+GROWING+PROCESS&rft.inventor=KELTNER%2C+STEVEN+J&rft.inventor=HOLDER%2C+JOHN%2C+D&rft.inventor=PHILLIPS%2C+RICHARD+J&rft.date=2002-01-09&rft.externalDBID=A1&rft.externalDocID=EP1169496A1