Method of manufacturing a bipolar transistor using a sacrificial sidewall spacer

• Main Authors: DECOUTERE, STEFAAN, VANHAELEMEERSCH, SERGE, BECKX, STEPHAN
• Format: Patent
• Language: English; French; German
• Published: 20.10.1999
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method is disclosed for forming a spacer, wherein said formation is preferably performed in a single dry etch sequence in a single dry etch tool. In this single dry etch sequence subsequently polysilicon spacers are defined, used as an etch mask and removed. Said etch sequence comprises at least o...