Verfahren zur Herstellung eines Gasstromsensors

• Main Authors: KURIYAMA, NARIAKI, HOSOI, TAKASHI, DOI, MIZUHO
• Format: Patent
• Language: German
• Published: 21.12.2000
• Edition: 7
• Subjects: ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT; MEASURING; MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK; MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR; MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL; METERING BY VOLUME; MICROSTRUCTURAL TECHNOLOGY; PERFORMING OPERATIONS; PHYSICS; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS; TARIFF METERING APPARATUS; TESTING; TRANSPORTING

A gas flow type sensor with a heat-wire bridge having an excellent performance which is attained by optimizing a sputtering process and a heat treatment process for forming a three-layer film (SiN-Pt-SiN) on a semiconductor substrate and improving interfacial adhesion of the three layers and, at the same time, effectively reducing an interfacial stress produced therein. The process comprises a film forming process for sequentially depositing by sputtering SiN, Pt and SiN in three layers on a semiconductor substrate and a heat treatment process for heat treatment of the coated films at a temperature up to 600 DEG C.