Verfahren zur Herstellung eines Gasstromsensors

A gas flow type sensor with a heat-wire bridge having an excellent performance which is attained by optimizing a sputtering process and a heat treatment process for forming a three-layer film (SiN-Pt-SiN) on a semiconductor substrate and improving interfacial adhesion of the three layers and, at the...

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Bibliographic Details
Main Authors KURIYAMA, NARIAKI, HOSOI, TAKASHI, DOI, MIZUHO
Format Patent
LanguageGerman
Published 21.12.2000
Edition7
Subjects
ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS
INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
MEASURING
MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK
MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE
MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUIDLEVEL
METERING BY VOLUME
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
TARIFF METERING APPARATUS
TESTING
TRANSPORTING
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Summary:A gas flow type sensor with a heat-wire bridge having an excellent performance which is attained by optimizing a sputtering process and a heat treatment process for forming a three-layer film (SiN-Pt-SiN) on a semiconductor substrate and improving interfacial adhesion of the three layers and, at the same time, effectively reducing an interfacial stress produced therein. The process comprises a film forming process for sequentially depositing by sputtering SiN, Pt and SiN in three layers on a semiconductor substrate and a heat treatment process for heat treatment of the coated films at a temperature up to 600 DEG C.
Bibliography:Application Number: DE19956018026T