InP-basierte Hochtemperaturlaser mit InAsP-Quantenschachtschichten und Sperrschichten aus Gax(AIIn)1-xP

• Main Authors: TAN, MICHAEL R.T, TANDON, ASHISH, CHANG, YING-IAN, BOUR, DAVID P, CORZINE, SCOTT W
• Format: Patent
• Language: German
• Published: 31.10.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a laser structure (100) that operates at a wavelength of 1.3 mu m and at elevated temperatures and a method of making same. The laser structure (100) includes a quantum well layer (32) of InAsP. The quantum well layer (32) is sandwiched between a first barrier layer (3...