InP-basierte Hochtemperaturlaser mit InAsP-Quantenschachtschichten und Sperrschichten aus Gax(AIIn)1-xP

• Main Authors: TAN, MICHAEL R.T, TANDON, ASHISH, CHANG, YING-IAN, BOUR, DAVID P, CORZINE, SCOTT W
• Format: Patent
• Language: German
• Published: 31.10.2007
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a laser structure (100) that operates at a wavelength of 1.3 mu m and at elevated temperatures and a method of making same. The laser structure (100) includes a quantum well layer (32) of InAsP. The quantum well layer (32) is sandwiched between a first barrier layer (33) and a second barrier layer (34). Each barrier layer (33) (34) exhibits a higher bandgap energy than the quantum well layer (32). Also, each barrier layer (33) (34) comprises Gax(AlIn)1-xP in which x ≥ 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure (100).