InP-basierte Hochtemperaturlaser mit InAsP-Quantenschachtschichten und Sperrschichten aus Gax(AIIn)1-xP

The present invention provides a laser structure (100) that operates at a wavelength of 1.3 mu m and at elevated temperatures and a method of making same. The laser structure (100) includes a quantum well layer (32) of InAsP. The quantum well layer (32) is sandwiched between a first barrier layer (3...

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Bibliographic Details
Main Authors TAN, MICHAEL R.T, TANDON, ASHISH, CHANG, YING-IAN, BOUR, DAVID P, CORZINE, SCOTT W
Format Patent
LanguageGerman
Published 31.10.2007
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a laser structure (100) that operates at a wavelength of 1.3 mu m and at elevated temperatures and a method of making same. The laser structure (100) includes a quantum well layer (32) of InAsP. The quantum well layer (32) is sandwiched between a first barrier layer (33) and a second barrier layer (34). Each barrier layer (33) (34) exhibits a higher bandgap energy than the quantum well layer (32). Also, each barrier layer (33) (34) comprises Gax(AlIn)1-xP in which x ≥ 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure (100).
Bibliography:Application Number: DE20036011412T