Verfahren zum Steuern der Herstellung leitender Strukturen in einer dielektrischen Schicht eines Mikrostrukturbauteils

By preparing fully-embedded interconnect structure samples for a cross-section analysis by means of electron microscopy or x-ray microscopy, degradation mechanisms may be efficiently monitored. Moreover, displaying some of the measurement results as a quick motion representation enables the detectio...

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Bibliographic Details
Main Authors ZSCHECH, EHRENFRIED, LANGER, ECKHARD, MEYER, MORITZ ANDREAS
Format Patent
LanguageGerman
Published 05.01.2011
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:By preparing fully-embedded interconnect structure samples for a cross-section analysis by means of electron microscopy or x-ray microscopy, degradation mechanisms may be efficiently monitored. Moreover, displaying some of the measurement results as a quick motion representation enables the detection of subtle changes of characteristics of an interconnect structure in a highly efficient manner.
Bibliography:Application Number: DE20031046026