Verfahren zur Integration von Luft als Dielektrikum in Halbleitervorrichtungen

Process for integration of air as dielectric in semiconductor devices comprises (a) applying a layer of dielectric to be structurized to a substrate, (b) structurizing this layer, (c) applying a conductor metal, (d) applying an organic dielectric, and (e) bringing the device into contact with a fluo...

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Bibliographic Details
Main Author SEZI, RECAI
Format Patent
LanguageGerman
Published 08.03.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Process for integration of air as dielectric in semiconductor devices comprises (a) applying a layer of dielectric to be structurized to a substrate, (b) structurizing this layer, (c) applying a conductor metal, (d) applying an organic dielectric, and (e) bringing the device into contact with a fluorine compound. An Independent claim is also included for semiconductor device with air dielectric layer(s) obtained by this process.
Bibliography:Application Number: DE20021038024