Single crystal thermal field lifting device and silicon carbide PVT method growth furnace thereof

• Main Authors: LIU RUXUAN, FENG SHULEI, DAI ZIYI, ZHU LEYAO, XU HONGWU, LIU XING
• Format: Patent
• Language: Chinese; English
• Published: 07.06.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The utility model discloses a single crystal thermal field lifting device and a silicon carbide PVT method growing furnace thereof, which comprise a lifting base for changing the height of a single crystal thermal field, a placing table for supporting the single crystal thermal field is arranged above the lifting base, the lifting base comprises a support bottom plate, a storage table is arranged above the support bottom plate, an extension column is arranged in the storage table, and the extension column is connected with the placing table. A follow-up assembly is rotatably arranged between the supporting bottom plate and the extension column, the placing table comprises an extension part fixedly arranged at the top of the extension column, four groups of extension arms are rotatably arranged at the corners of the extension part, adjusting arms are slidably arranged in the extension arms, a plurality of pin holes are formed in the upper surfaces of the extension arms and the upper surfaces of the adjusting a