Die for growing gallium oxide single crystal by edge-defined film-fed growth method

• Main Authors: WANG XIN, ZHANG XINGZI, ZHENG DONG
• Format: Patent
• Language: Chinese; English
• Published: 15.03.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The utility model relates to the technical field of gallium oxide single crystal growth, and discloses a mold for growing gallium oxide single crystals by an edge-defined film-fed growth method, a first siphon chamfer is arranged at the bottom of a slit surface of a first guide template, a plurality...