Thermal field structure of czochralski silicon

• Main Authors: HONG YUANWEN, LYU SHUFANG, LI HENGHENG, ZHANG RUIXIN
• Format: Patent
• Language: Chinese; English
• Published: 04.07.2023
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The utility model discloses a thermal field structure of czochralski silicon, which comprises a furnace body, and a material containing component, a heater component and a heat preservation cylinder component are sequentially arranged in the furnace body from the center to the outside; a furnace chassis is arranged at the bottom in the furnace body; the heat preservation cylinder assembly comprises a lower heat preservation cylinder, a middle heat preservation cylinder and an upper heat preservation cylinder which are sequentially connected from bottom to top, the inner diameter of the lower heat preservation cylinder and the inner diameter of the upper heat preservation cylinder are both smaller than the inner diameter of the middle heat preservation cylinder, a first annular heat insulation gasket is arranged between the lower heat preservation cylinder and the middle heat preservation cylinder in a cushioned mode, and a second annular heat insulation gasket is arranged between the middle heat preservation