Bare electrical characteristics of semiconductor laser output monitoring structure
The utility model provides a bare electrical characteristics of semiconductor laser output monitoring structure, a serial communication port, light beam that the laser instrument chip sent is via microtrabeculae lens and cylindrical mirror accurate beam of formation after fast axle carries out the c...
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Main Authors | , , , , , , , , , |
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Format | Patent |
Language | English |
Published |
07.10.2015
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Subjects | |
Online Access | Get full text |
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Summary: | The utility model provides a bare electrical characteristics of semiconductor laser output monitoring structure, a serial communication port, light beam that the laser instrument chip sent is via microtrabeculae lens and cylindrical mirror accurate beam of formation after fast axle carries out the collimation with the slow axis direction in the place ahead, this bundle accurate beam shine on the beam splitter, accurate beam falls into transmitted light and reverberation that the multi beam has specific beam intensity ratio, transmission way light beam is assembled by focusing lens and is accomplished the coupling on the output optical fibre terminal surface that forms images after the beam splitting, single bundle or multi beam reflex circuit light beam get into sensitive detection parts and carry out spectrum in addition, the monitoring of power, main laser is unable monitors to exporting in having removed traditional technical scheme, and the too big restriction of monitoring noise, the control accuracy the when laser instrument uses has been improved, the flexibility of laser instrument inner structure design has still been strengthened when guaranteeing to obtain optimal coupling efficiency. |
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Bibliography: | Application Number: CN20152382168U |