Low light decay solar cell structure

• Main Authors: WANG LIJIAN, ZHANG JINGJING, CAI YUEFENG
• Format: Patent
• Language: English
• Published: 25.03.2015
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The utility model relates to a low light decay solar cell structure comprising an N-type crystalline silicon substrate used for supporting; an n+ front surface field disposed on the upper surface of the N-type crystalline silicon substrate in a covered manner; an antireflection passive film disposed on the n+ front surface field in a deposited manner; a p+ emitter junction disposed on the lower surface of the N-type crystalline silicon substrate in an attached manner; a passive film disposed on the lower surface of the p+ emitter junction in a deposited manner; a silver electrode having grid lines, which are disposed on the upper part of the N-type crystalline silicon substrate; an aluminum back surface field disposed on the lower surface of the passive film in an attached manner. The lower surface of the silver electrode passes through the antireflection passive film and the n+ front surface filed, and is contacted with the upper surface of the N-type crystalline silicon substrate. The upper surface of the aluminum back surface field is extended out of a boss, and the grid lines of the boss are distributed, and then the boss passes through the passive film, and is embedded in the p+ emitter junction. The low light decay solar cell structure is advantageous in that by adopting the boron-doping aluminum paste junction forming technology, the back surface p+ emitter junction can be formed on the N-type solar silicon substrate, and the front surface can be provided with the n+ front surface field by adopting the phosphorus diffusion technology, and therefore the efficiency of the solar cell can be obviously improved, and the light decay object can be completed achieved.