Nano-elastic memory device and method of manufacturing the same

• Main Author: CHANG JOO-HAN,KANG DONG-HUN,CHA YOUNG-KWAN,PARK WAN-JUN
• Format: Patent
• Language: English
• Published: 07.03.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate...