Semiconductor laser device and laser projector

A semiconductor laser device (10) having different end face reflectances. The semiconductor laser device (10) has an electrode of a four-split structure composed of four electrode portions (1, 2, 3, 4) arranged on a striped ridge portion (107a). A larger injected current is injected into the electro...

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Bibliographic Details
Main Author MIZUUCHI K.,YAMAMOTO K.,KASAZUMI K.,KIDOGUCHI I
Format Patent
LanguageEnglish
Published 27.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A semiconductor laser device (10) having different end face reflectances. The semiconductor laser device (10) has an electrode of a four-split structure composed of four electrode portions (1, 2, 3, 4) arranged on a striped ridge portion (107a). A larger injected current is injected into the electrode nearer the light-emitting end face. In such a semiconductor laser device, the carrier density distribution in the active layer opposed to the striped ridge portion can be suitable for the light intensity distribution, and consequently the instability of the transverse mode caused by spatial hole burning and the degradation of the high-output characteristic due to lowering of the gain can be prevented.
Bibliography:Application Number: CN200480035275