Semiconductor photoconductive switch and method for fabricating same

• Main Author: SIFU,HU HU
• Format: Patent
• Language: English
• Published: 13.12.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invention discloses a semiconductor photoelectric conductance switch, which is characterized by the following: the semiconductor element enlarges the cross-section area of present switch conductance, which improves uniformity of transmission current; the doping contact layers (4), (5) are set on the upper and lower surfaces (2), (3) of substrate (1), whose longitudinal cross section among inner end length L is tilted current transmission plane Sc; the electrodes (6), (7) with refractory metal layer are set on the doping contact layers (4), (5) separately, which contains electrode leads (8), (9); the upper and lower steps (13), (14) are set on the upper and lower surfaces (2), (3) of substrate (1) separately with doping contact layers (4), (5) covering the surface of steps (13), (14).