Production of non-volatile memory

• Main Author: JIANLONG,ZHUANG ZHU
• Format: Patent
• Language: English
• Published: 01.11.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The method comprises: sequentially forming a bottom dielectric layer, a charge-trapped layer, a top dielectric layer and a conducting layer; removing a portion of said conducting layer, top dielectric layer, charge-trapped layer, bottom layer and substrate to form multi trenches; filling out insulat...