Production of non-volatile memory
The method comprises: sequentially forming a bottom dielectric layer, a charge-trapped layer, a top dielectric layer and a conducting layer; removing a portion of said conducting layer, top dielectric layer, charge-trapped layer, bottom layer and substrate to form multi trenches; filling out insulat...
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Main Author | |
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Format | Patent |
Language | English |
Published |
01.11.2006
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Subjects | |
Online Access | Get full text |
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