Silicon photoelectric detector passivating method

• Main Authors: SUYING YAO, SHENGCAI ZHANG, SHURONG LI
• Format: Patent
• Language: English
• Published: 19.11.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; SEMICONDUCTOR DEVICES; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE

The invented method modifies present technique making planar structure devices cover the passivation film adhesive only by the annular surface of the p-n junction after photo etching with photo mask.The invention reduces dark current so as to raise high sensitivity, protects p-n junctions of silicon photo detectors as well as increases the stability and reliability of the devices.