Oxynitride shallow trench isolation and method of formation

• Main Author: KLAUS. D. BEYER,FEN F. JAMIN,PATRICK. R. VAREKAMP
• Format: Patent
• Language: English
• Published: 15.08.2007
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An oxynitride material is used to form shallow trench isolation regions in an integrated circuit structure. The oxynitride may be used for both the trench liner and trench fill material. The oxynitride liner is formed by nitriding an initially formed oxide trench liner. The oxynitride trench fill ma...