Dynamic processing chamber baffle

• Main Authors: KOTTAKI UDAY SHANKAR, KULKARNI MAYUR G
• Format: Patent
• Language: Chinese; English
• Published: 14.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

An exemplary method of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. A method may include depositing a material layer on a substrate housed in a processing region of a semiconductor processing chamber. The processing region may be maintained at a first pressure during deposition. The method may include extending a baffle within the processing region. The baffle may vary the flow path within the processing region. A method may include forming a plasma of a processing or etching precursor within a processing region of a semiconductor processing chamber. The processing region may be maintained at a second pressure during formation. The method may include treating a material layer deposited on a substrate with a plasma effluent of a treatment precursor. And the process can be circulated for any times. 半导体处理的示例性方法可包括将沉积前驱物输送到半导体处理腔室的处理区域中。方法可包括在容纳于半导体处理腔室的处理区域中的基板上沉积材料层。处理区域可在沉积期间保持在第一压力。方法可包括在处理区域内延伸挡板。挡板可改变处理区域内的流动路径。方法可包括在半