Method for manufacturing semiconductor device

• Main Authors: NAGAYA MASATAKE, NAGUMO YUJI, UECHA MASAFUMI, KITAICHI MITSURU, OKUDA MASARU, TAKEDA MASAKAZU, MORI AKIRA, KIYAMA NAOYA
• Format: Patent
• Language: Chinese; English
• Published: 17.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

This method for manufacturing a semiconductor device is provided with: a step for forming a plurality of element structures on a first surface of a semiconductor wafer so that the plurality of element structures are arranged in a matrix; pressing a pressing member against a second surface of the semiconductor wafer on the back side of the first surface along a boundary of adjacent element structures, thereby forming a crack in the semiconductor wafer extending along the boundary and in the thickness direction of the semiconductor wafer; and pressing the dividing member against the semiconductor wafer along the boundary from the first surface side, thereby dividing the semiconductor wafer along the boundary. 半导体装置的制造方法，具备如下工序：在半导体晶圆的第一表面，以将多个元件构造排列成矩阵状的方式形成多个元件构造；沿相邻的元件构造的边界将按压部件向半导体晶圆的位于第一表面的背侧的第二表面进行推抵，从而在半导体晶圆中形成沿着边界并且沿半导体晶圆的厚度方向延伸的裂纹；以及从第一表面侧沿着边界将分割部件向半导体晶圆进行推抵，从而沿边界分割半导体晶圆。