Elastic wave device
Provided is an elastic wave device capable of suppressing useless waves at a frequency lower than the resonance frequency and located near the resonance frequency. This elastic wave device (10) is provided with: a support member (13) including a support substrate (16); a piezoelectric layer (14), wh...
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Format | Patent |
Language | Chinese English |
Published |
03.05.2024
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Subjects | |
Online Access | Get full text |
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Abstract | Provided is an elastic wave device capable of suppressing useless waves at a frequency lower than the resonance frequency and located near the resonance frequency. This elastic wave device (10) is provided with: a support member (13) including a support substrate (16); a piezoelectric layer (14), which is a lithium niobate layer or a lithium tantalate layer, provided on the support member (13); and an IDT electrode (11) provided on the piezoelectric layer (14) and having a pair of bus bars and a plurality of electrode fingers. A sound reflecting portion (cavity portion (10a)) is formed at a position overlapping at least a part of the IDT electrode (11) in a plan view as viewed in a stacking direction of the support member (13) and the piezoelectric layer (14). When the thickness of the piezoelectric layer (14) is d and the distance between the centers of adjacent electrode fingers is p, d/p is 0.5 or less. Some of the plurality of electrode fingers are connected to one bus bar of the IDT electrode (11), the r |
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AbstractList | Provided is an elastic wave device capable of suppressing useless waves at a frequency lower than the resonance frequency and located near the resonance frequency. This elastic wave device (10) is provided with: a support member (13) including a support substrate (16); a piezoelectric layer (14), which is a lithium niobate layer or a lithium tantalate layer, provided on the support member (13); and an IDT electrode (11) provided on the piezoelectric layer (14) and having a pair of bus bars and a plurality of electrode fingers. A sound reflecting portion (cavity portion (10a)) is formed at a position overlapping at least a part of the IDT electrode (11) in a plan view as viewed in a stacking direction of the support member (13) and the piezoelectric layer (14). When the thickness of the piezoelectric layer (14) is d and the distance between the centers of adjacent electrode fingers is p, d/p is 0.5 or less. Some of the plurality of electrode fingers are connected to one bus bar of the IDT electrode (11), the r |
Author | DAIMON KATSUYA |
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Discipline | Medicine Chemistry Sciences |
DocumentTitleAlternate | 弹性波装置 |
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RelatedCompanies | MURATA MANUFACTURING CO., LTD |
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Snippet | Provided is an elastic wave device capable of suppressing useless waves at a frequency lower than the resonance frequency and located near the resonance... |
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SubjectTerms | BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS |
Title | Elastic wave device |
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