Manufacturing method of refrigeration infrared chip and refrigeration infrared chip

• Main Authors: TAN BISONG, ZHANG GUOFENG, MAO JIANHONG, YAO JIAJING, JIANG YIKUN, XU ZHIMIN, LI WEIWEI
• Format: Patent
• Language: Chinese; English
• Published: 03.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention provides a manufacturing method of a refrigeration infrared chip. The manufacturing method comprises the following steps: taking a cadmium zinc telluride wafer as a substrate; sequentially growing mercury cadmium telluride and a passivation layer on the cadmium zinc telluride substrate; uniformly coating photoresist on the top of the chip; the tellurium zinc cadmium substrate is thinned; and removing the photoresist and cleaning. According to the method, the tellurium zinc cadmium substrate is thinned, so that the thermal stress generated by glue filling and baking is reduced, and the possibility that the indium column falls off or fractures due to stress is reduced. 本发明提供一种制冷红外芯片的制作方法，包括步骤：将碲锌镉晶圆作为衬底；在碲锌镉衬底上依次生长碲镉汞与钝化层；在芯片顶部匀上光刻胶；对碲锌镉衬底进行减薄；去除光刻胶并进行清洗。本发明通过对碲锌镉衬底进行减薄，减小了填胶烘烤产生的热应力，降低了铟柱因为应力而导致脱落或断裂的可能。