Short-wave infrared photoelectric detector and preparation method thereof

• Main Authors: LIANG ZHONG, SHAO LI, CHEN HUI, SHI HAOFEI, WEN XINHAO, YU LEYONG, TANG LINLONG
• Format: Patent
• Language: Chinese; English
• Published: 02.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The invention discloses a short-wave infrared photoelectric detector and a preparation method thereof. The detector comprises a back electrode, a substrate, a barrier modification layer, a photosensitive layer and a front electrode which are sequentially arranged from bottom to top. The material of the substrate is Si, the material of the barrier modification layer is Au, and the material of the photosensitive layer is Ni. The barrier modification layer Au is used for increasing the barrier height of a Schottky junction between Ni and Si and preventing electrons of the detector from diffusing towards the substrate in a dark state, so that the dark current of the detector is reduced, the dark current density of the device can be reduced to be smaller than 5 nA/cm < 2 > when the working voltage is 0 V, and the dark-state noise spectrum intensity is smaller than 10 <-14 > A/Hz < 1/2 >. Under illumination with the wavelength being 1550 nm and the light intensity density being 166 mW/cm < 2 >, the specific detecti