Reactor with inductively coupled plasma source

• Main Authors: NGUYEN, THANH, VAN, AWAMI MOHAMED, PETIARD, VINCENT, PAUL KISHOR C, KEDLAYA DINESH, SHARMA SUNIL
• Format: Patent
• Language: Chinese; English
• Published: 26.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRICITY

An exemplary semiconductor processing system may include an inductively coupled plasma source. The system may include an RF power source electrically coupled with an inductively coupled plasma source. The system may include a first gas source fluidly coupled with an inductively coupled plasma source. The system may include a second gas source. The system may include a two-channel showerhead assembly defining a first plurality of apertures and a second plurality of apertures. The first plurality of apertures may be fluidly coupled with an inductively coupled plasma source. The second plurality of apertures is fluidly coupled with the second gas source. 示例性半导体处理系统可包括电感耦合等离子体源。所述系统可包括RF功率源，所述RF功率源与电感耦合等离子体源电耦合。所述系统可包括第一气体源，所述第一气体源与电感耦合等离子体源流体耦合。所述系统可包括第二气体源。所述系统可包括双通道喷头组件，所述双通道喷头组件界定第一多个孔和第二多个孔。所述第一多个孔可与电感耦合等离子体源流体耦合。所述第二多个孔与所述第二气体源流体耦合。